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EF_SRAM_1024x32
Efabless

EF_SRAM_1024x32

NOTE: To inquire about using this commercial IP in your project, please get in touch with us: shuttle@efabless.com

Status

  • Maturity: Integrated
  • Certification: EF Certified
  • Provider: Efabless
  • License: Commercial
  • Catagory: Static Random-Access Memory
  • Foundary: Skywater
  • Node: 130nm
  • PDK: SKY130

Overview

This is a 1024 words by 32 bits (4kByte) commercial grade low power embedded Single Port Synchronous (flow through) SRAM in SKY130 technology, in a compact 0.118 mm² area.

An active high read-write enable signal controls the read/write operation of the memory. When bit-enable is high and readwrite enable is low, data on the data input pin is written into the memory location addressed by the address present on the address pins. Reading the device is accomplished while read-write enable is high. Under these conditions, the contents of the location addressed by the information on address lines is present on the data output pin. In write cycle, data to be written is driven onto data output pin. If there is no read or write, while memory is enabled, data output pin will hold previous data.

Memory dimensions in SKY130 technology: 387.870 um x 303.315 um = 0.118 mm²

A wishbone interface wrapper version is also available.

Installation:

You can either clone repo or use IPM which is an open-source IPs Package Manager

  • To clone repo: git clone https://github.com/efabless/EF_SRAM_1024x32
  • To download via IPM , follow installation guides here then run ipm install EF_SRAM_1024x32

For instructions on integrating this IP into your project, see the following article.

Memory Features:

  • Synchronous Read-Write
  • Active High Bit Enables
  • Single Read-Write Enable (Low = write, High = read)
  • Write on a bit basis
  • Separate pins for data input and data output
  • Separate Power Supplies for core and periphery
  • Body bias option
  • Scan Chain Testmode
  • Wafer Level Burn-In Testmode
  • Option to switch off all wordlines while chip is enabled
  • Option for Power Switch
  • Clock Gating

Block Diagram

Pin Description

NAME TYPE DIRECTION DESCRIPTION
AD [9:0] CMOS IN This input value selects the location to be read during a read cycle, and the location to be written during a write cycle. It is sampled on rising edge of clock.
R_WB CMOS IN This is the read/write control and sampled on rising edge of clock. When R_WB is high, the memory is in a read cycle mode. When R_WB is low, the memory is in write cycle mode.
CLKin CMOS IN Clock synchronizes the operations of the memory. All inputs are sampled on rising edge of clock.
BEN [31:0] CMOS IN Each bit of the BEN bus selects one bit of the DI bus. When one or more BEN inputs are high (active), and R_WB is low (write enabled) then the selected bits will be written into the memory.
DI [31:0] CMOS IN This data is written into the memory location selected by addr inputduring the write cycle. It is ignored during a read cycle.
EN CMOS IN EN (Chip Enable) is high (and TM low), read and write operation is performed.
TM CMOS IN When TM (Testmode)is high, memory is in testmode and normal memory operation is disabled. Inputs are tied to outputs through scan chain logic.
SM CMOS IN When SM (Scan chain control) is high, output of a input register is passed to next register. When low, input register receives input from input pin.
WLBI CMOS IN Wafer Level Burn-In Test mode control: When high, all wordlines are ON.
WLOFF CMOS IN Normal operation when low. All wordlines are clamped to vnb when high.
ScanInCC CMOS IN Input to Address and Control scan chain. ScanInDL
ScanInDL CMOS IN Input to Data scan chain (left side of the macro).
ScanInDR CMOS IN Input to Data scan chain (right side of the macro).
DO [31:0] CMOS OUT Data from the memory location selected by address is driven onto DO during a read cycle. In a write cycle, data to be written is driven onto DO. If there is no read or write, while memory is enabled, DO will hold previous data.
ScanOutCC CMOS OUT Output of Scan Chain of address and control pins. Note - DO is output of scan chain of data input pins.

Without the Power Switch feature enabled (default recommended mode)

NAME TYPE DIRECTION DESCRIPTION
vpwrm Supply IN Connect vpwrm to core power supply vpwra
vpwra Supply IN Nominal 1.8 power supply to memory array
vpwrp Supply IN Nominal 1.8 power supply to periphery
vpwrac Supply IN Connect vpwrac to core power supply vpwra
vpwrpc Supply IN Connect vpwrpc to core power supply vpwra
vgnd Supply IN Nominal 0 V power supply (ground).
vpb Bias Voltage IN Nwell connection, tie to the maximum power supply (can be vpwra or vpwrp)
vnb Bias Voltage IN Pwell connection, nominally equal to vgnd

With the Power Switch feature enabled

NAME TYPE DIRECTION DESCRIPTION
vpwrm Supply IN Nominal 1.8 main power supply
vpwra Supply IN power supply to memory array (internal node)
vpwrp Supply IN power supply to periphery (internal node)
vpwrac Supply IN Control signal to turn on the power supply to periphery (active LOW, CMOS)
vpwrpc Supply IN Control signal to turn on the power supply to core (active LOW, CMOS)
vgnd Supply IN Nominal 0 V power supply
vpb Bias Voltage IN Nwell connection, tie to the maximum power supply (can be vpwrm)
vnb Bias Voltage IN Pwell connection, nominally equal to vgnd

Specifications

DC Specifications

Conditions

  • Process Condition : Typical
  • Junction Temperature : 25 deg C
  • Operating Voltage : 1.8 V
  • Operating Frequency : 100 MHz

Power Dissipation When R_WB=HIGH

  • READ Active = 77.6 pJ
  • READ Active = 8.6 mA
  • READ Peak = 80.6 mA

Power Dissipation When R_WB=LOW

  • WRITE Active = 69.9 pJ
  • WRITE Active = 7.8 mA
  • WRITE Peak = 79.1 mA

Power Dissipation When EN=LOW, All Other Inputs Switching

  • Standby = 0.174 pJ
  • Standby = 19 nA
  • Standby Peak = 0.47 mA

Power Dissipation When TM=HIGH, Clock Switching

  • Test Mode = 9.6 pJ
  • Test Mode = 1.1 mA
  • Test Peak = 33.7 mA

Leakage: Power switches ON, Disabled (EN=LOW)

  • Power = 41611.2 pW
  • Current = 23.2 nA

**Leakage - One or More Power switches OFF (VPWRPC=HIGH or VPWRAC=HIGH)

  • Power = 1420.4 pW
  • Current = 0.79 nA

AC Specifications

Conditions

  • Process Condition : Typical
  • Junction Temperature : 25 deg C
  • Operating Voltage : 1.8 V
  • Operating Frequency : 100 MHz
DESCRIPTION SYMBOL MIN SPEC (ns) MAX SPEC (ns) ACTUAL (ns)
Cycle Time Tcyc 8.0
Clock High Time Tchi 4.0
Clock Low Time Tclo 4.0
Clock to data-out (Read Cycle) Trd 0.5 4.74 Rise: 2.4 Fall: 2.5
Clock to data-out (Write Cycle) Twr 0.5 4.0 Rise: 2.04 Fall: 2.1
Setup time of addr/ctrl to clk Tsad 0.5 Rise: 0.5 Fall: 0.6
Setup time of EN to clock Tsen 1.3 1.4
Hold time of addr/ctrl from clk Thad 0.7 Rise: 0.3 Fall: 0.3
Setup time of Data to clk Tsdi 0.7 0.8
Hold time of data from clk Thdi 1.0 0.5
Setup time of BEN to clk Tsben 0.7 0.8
Hold time of BEN from clk Thben 1.0 0.5

Test Mode Parameters

DESCRIPTION SYMBOL MIN SPEC (ns) MAX SPEC (ns) ACTUAL (ns)
Clock to data-out (Test Mode) Tcotm 0.15 3.6 Rise: 1.6 Fall: 1.6
Clock to ScanOutC (Test Mode) Tcotm 0.15 3.6 Rise: 1.7 Fall: 1.7
Setup time of Add & Control to clk (Test Mode) Tsctl_tm 0.8 Rise: 0.85 Fall: 0.88
Hold time of Add & Control to clk (Test Mode) Thctl_tm 0.6 Rise: 0.57 Fall: 0.57
Setup time of TM, SM to clk Tstm 6.5 6.5
Hold time of TM, SM from clk Thtm 1.0 1.0

Timing Diagram

Summary

Catalog ID

EF_SRAM_1024X32

Provider

Vendor

Vendor

Efabless

Node

130nm

Foundry

Skywater

Category

Static Random-Access Memory

Licensing

Info

Commercial (Paid)

Quality

Certification

EF Certified

Maturity

Integrated