This is a 4096 words by 8 bits commercial grade low power embedded Single Port Synchronous (flow through) SRAM in SKY130 technology. An active high read-write enable signal controls the read/write operation of the memory. When bit-enable is high and readwrite enable is low, data on the data input pin is written into the memory location addressed by the address present on the address pins. Reading the device is accomplished while read-write enable is high. Under these conditions, the contents of the location addressed by the information on address lines is present on the data output pin. In write cycle, data to be written is driven onto data output pin. If there is no read or write, while memory is enabled, data output pin will hold previous data.
Memory dimesions in SKY130 technology: 387.870 um x 303.315 um = 0.118 mm^2^
EFSRAM_04096X008_032_18
Vendor
Efabless
130nm
Skywater
Static Random-Access Memory
Commercial (Paid)
EF Certified
Production