1kb 7T SRAM 8x4...



An efficient 1kb SRAM 8x4 Cell array, built on 32-bit 7T SRAM Cells, in which a novel 7T SRAM design is utilized, which offers better stability and low leakage over conventional design. This was achieved using high Vth pull-up PMOS and extra one NMOS transistor.

Why we decided on this?:

Even today, SRAM is the fastest semiconductor memory devices, utilized in building CPU Cache memories for High-end devices. But, as modern era demands high performance and low-power, for wearables and handsets, which can't be fulfilled by a conventional design due to high leakage currents and less stability. So, we wanted to come up with a new circuit, which exhibits better stability and lower leakage currents, thus delivering high-end device requirements.

Design Goals:

  1. To design an efficient 1kb SRAM, which can operate at high clock speeds, and exhibit low leakage.
  2. To improve the read/write stability under large variations.
  3. To prevent the conventional half-selection issue.

Block diagram of our Design:

Figure 1: 16-bit SRAM sub-array


Figure 2: 32-bit SRAM Sub Array

       A 32b SRAM Sub Array is constructed by using 16 bit 7T SRAM cells. This sub Array has the capability to store 25 bits. This can be accomplished by using an (1-2) word line decoder and (2-1) Multiplexer, as shown in Figure 2.

16b = 24b

32b = 24 b x 21 b = 25b

 1 kb Sub Array:

       A 1-kb Sub-Array can be built as 8 rows Χ 4 columns. An SRAM 1-kb Sub-Array is designed with the help of 32 bit Sub-Array. In order to address one row out of 16, the row address decoder needs 5 address bit i.e. 25 bits = 32 bits.


Figure 3: 1 kb SRAM Cell Array

This can be accomplished by using (3-8) row address decoder and (2-4) column address decoder. 1kb Sub-Array is shown in Figure 3.

32 bits = 25 bits

1kb = 25 x 23 x 22 bits = 210 bits



Figure 4: Basic 7T SRAM cell

Figure 5: Basic 7T SRAM Cell array


Expected Performance Summary of 7T SRAM Cell (130nm process):

S. No


Expected Range of Values


Clock Speed

400-600 MHz


Leakage Current during Read

15-40 uA


Leakage Current during Write

600 – 700 uA


Write Access Time

0.01 – 2 ns


Read Access Time (Array)

0.1 – 5 ns



0.1 - 2 V


Leakage Power

600 – 700 uW


Total Power Consumed by a Cell

40 – 100 uW


Total Power Consumed by Array

400 – 500 uW



0.1 – 2 V



  1. SRAM Circuit Topologies: https://drive.google.com/file/d/1ZGnr-peAYKCfvxOGbznfdm8cwIVCjIym/view?usp=sharing
  2. Aly, R. E., Faisal, M. I., & Bayoum, M. A. (2005). Novel 7T SRAM cell for low power cache design. IEEE International Conference on SOC, 171–174. doi:10.1109/SOCC.2005.1554488 [Crossref][Google Scholar]
  3. A. Kotabe et al., "A low-power four-transistor SRAM cell with a stacked vertical poly-silicon PMOS and a dual-word-voltage scheme," in IEEE Journal of Solid-State Circuits, vol. 40, no. 4, pp. 870-876, April 2005, doi: 10.1109/JSSC.2005.845553.

Team Members:

K. Sarath Chandra (College Faculty Mentor)

Lakku Yashaswi (Lead Designer)

Kothapalli Srujana

Kummari Shivani

Kuruva Thirumalesh

If you are collaborating on this project, please click here to access your collaboration files, and click "Accept Share" in the actions column if you haven't done so already.


Yashaswi Lakku


A novel basic Low-power 7T SRAM cell, designed and utilized in designing an efficient 1kb SRAM 8X4 Cell Array using 32-bit 7T SRAM cells. It uses high Vth pull-Up PMOS to improve stability and reduce leakage at read/write modes, even at large variations. This will be implemented using CMOS 130nm process.





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