The design of monolithic radiofrequency integrated circuits (RFICs) is a multidisciplinary project that spans from microelectronics to electromagnetics. So, naturally, the design flow of an RFIC uses different pieces of software for different parts of the process. This process, if done in an industrystandard environment, requires a number of (expensive) licenses for proprietary software and simulators  from SPICE to FullWave solvers to parasitics extractors  as well as an NDA that grants use to a process design kit of a certain technology... all this is out of reach of someone who's not an employee of a design house or a researcher in academia.
But all is not lost, not lost indeed, because now there is an opensource PDK available: the Skywater 130nm CMOS process was released to the public and every detail of the technology is accessible to the curious, no NDA needed. This is huge. This means that anyone with access to some EDA tools could design their own integrated circuits, including the hobbyist community, small design houses and small research groups.
The PDK also comes with suggestions of opensource, free tools that can be used to create a working design flow for digital and analog designs. These tools cover all of the needs of a digital circuit synthesis and most of the needs of the analog circuit design flow. The RFIC design flow shares some tools with the analog circuit flow, but there are some areas, especially in FullWave solvers and parasitic extraction, that need some more attention.
Having these needs in mind, and knowing that the 130nm CMOS node can be useful for RF circuits at least up until the 60 GHz ISM band, we have decided to build a demonstrator chip for 60 GHz applications. This chip doesn't aim to be a highperformer, nor to adhere to commercial standards and specifications, but instead it aims to serve as a proofofconcept: to prove that, if done correctly, a complete opensource RFIC design flow on a lowcost CMOS technology could produce useful designs.
The submission will include a Voltage Controlled Oscillator (VCO), a Power Amplifier (PA), a Low Noise Amplifier (LNA), a Variable Gain Amplifier (VGA) a Detector, a Balun, a microstrip plus SCPW set, plus a TRL kit for deembedding. The expected performance of these circuits, as well as their basic schematic, are presented below:
VCO: Crosscoupled pairbased VCO with sourcefollower buffers and a resonant tank based on a planar inductor and differential varactor bank for frequency tuning. CCP biasing done by a 1:1 current mirror to improve matching of the reference and core currents. Expected results: 3 GHz tuning range at 60 GHz, phase noise better than 100 dBc/Hz at 10 MHz offset from the carrier frequency at 18 mW of DC power consumption (VCO core only), maximum DC power consumption of 36 mW. Buffer with input capacitance smaller than 6 fF, output reflection loss smaller than 10 dB inside the Vband.
VGA: Standard cell implemented with a cascode with currentsteering technique to implement power gain tuning. The amplifier standardcell load is implemented with microstrip stubs. The cells are cascaded to realize the needed maximum gain. The amplifier will operate in class A.
Maximum gain of 10 dB, gain control range better than 20 dB (from 10 dB to +10 dB), 10dB input and output bandwidth of 15% centered at 60 GHz (from 55.5 GHz to 64.5 GHz). Typical DC power consumption of 20 mW per cell, maximum of 40 mW. Output 1dB compression point of 20 dBm. Source paper: DOI 10.1109/LMWC.2014.2316253.
Microstrips and SCPW: DUTs include a 1mmlong, 50ohm microstrip line and a 1mmlong, 50ohm slowsave CPW (SCPW). TRL structures include a the GSG pads, the through, an opencircuit reflect and a lambda/4 line centered at 60GHz.
Expected results: attenuation constant lower than 2 dB/mm for the microstrip, lower than 1.5 dB/mm for the SCPW.
PA:
The power amplifier will use a multistage topology to simplify the design procedure, as it is a proven and standard PA design. The drain load could be implemented with planar inductors instead of microstrips to simplify the design, as well as the input and output matching networks, if needed.
Expected results:
Parameter 
Typical 
Total current consumption 
30 mA 
Operating Frequency 
60 GHz 
Input impedance 
50 
Output impedance 
50 
Input Return Loss 
< 10 dB 
Output Return Loss 
< 10 dB 
Banwidth 
9 GHz 
1dB compression Point 
6 dBm 
LNA: A cascode with tuned LC load for narrowband amplification, including source degeneration to match the noise impedance of the circuit. The circuit includes input and output impedancematching networks. The amplifier will operate in class A.
Expected results:
Parameter 
Condition 
Minimum 
Typical 
Maximum 
Total current consumption 


20 mA 
40 mA 
Operating Frequency 
20 MHz of BW 
59.99 GHz 
60 GHz 
60.01 GHz 
Input impedance 
@ 60 GHz 
50 
50 
55 
Output impedance 
@ 60 GHz 
 
50 

Input Return Loss 
S11 @ 60 GHz 
 
 
24 dB 
Noise Figure 
@ 60 GHz 
 
3 dB 
 
Intermodulation product 
Third Order Intercept Point Ref. to 50 ohms 
10 dB 
 
 
Compression Point* 
compression (referred to 50 ohms) 
20 dB 
 
 
Input power accepted 
@ 60 GHz 

84 dBm 

Detector: The detector will be implemented as a traditional MOSFET detector circuit, where the FET implements the highspeed rectification element. The necessary passive elements, Ib and the shunting capacitor C, will be implemented with a current mirror and a MIM capacitor, respectively.
Reference article: 10.1109/IMS30576.2020.9223863.
The specifications below are for the entire 60 GHz ISM band (5766 GHz).
Sensitivity 
10 V/mW (linear) 
Sensitivity Flatness over Freq. Band 
+4 dB 
Minimum Detection Power 
50 dBm 
Balun: Our goal is to build two balanced to unbalanced transformers, differing from each other by the transformation ratio: one 1:1 (no transformation ratio) and the other 1:n, where 'n' is the highest value obtained respecting the metal density design rule. As shown in the article from which the figure below is taken, changing the metal width of the coils separately has the effect of changing this 'n'. This will help us to estimate, for future device layouts, the possible values of the transform ratio and the signal insertion loss, which is a function of the shape, structure and materials used for its manufacture.
doi:10.1017/S1759078711001073
The specifications below are for the entire 60 GHz ISM band (5766 GHz).
Parameter 
1:1 
1:n 
Insertion Loss (S21, S31) 
6 dB 
ndependent 
Return Loss (all ports) 
< 10 dB 
< 10 dB 
Nominal Phase Shift (between outputs) 
180 degrees 
180 degrees 
Common Mode Rejection 
> 20 dB 
> 20dB 
Amplitude Balance (between outputs) 
< 2 dB 
< 2 dB 
Team members:
Leader: Leonardo Amorese Gallo Gomes, PhD candidate at University of São Paulo (Brazil) and Communauté Université GrenobleAlpes (France). Email: amorese.leonardo@gmail.com, leonardo.gomes@usp.br
João Eduardo Gentil Lé, master student at Univesity of São Paulo (Brazil). Email: joao.le@usp.br, joao.le@tutanota.com.
Walter Santiago Campos Aranda, Master degree student at University of São Paulo (Brazil). Email: walter.aranda@usp.br, camposaranda@gmail.com
Luis Antonio Quispe Cartagena, PhD student at Univesity of São Paulo (Brazil). Email: lcartagena@usp.br
The goal is to build a demonstrator chip in the 10 mm² user project area to assess the feasibility of implementing mmwave designs in a lowcost technology using a complete opensource RFIC design flow. We propose to submit a number of basic mmwave circuits, such as voltagecontrolled oscillator, power amplifier, balun, lownoise amplifier and detector, as well as some test features like inductors, (slowwave) transmission lines and a basic TRL calibration kit.